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BUL810 - NPN Transistor

Description

ObThe BUL810 is manufactured using high voltage -multiepitaxial mesa technology for cost-effective )high performance.

It uses a hollow emitter t(sstructure to enhance switching speeds.

cThe BUL series is designed for use in lighting duapplications and low cost switch-mode power Obsolete Prosupplies.

Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Low base-drive requirements ).
  • Very high switching speed t(s.
  • Fully characterized at 125 °C duc.

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Full PDF Text Transcription

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BUL810 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Low base-drive requirements )■ Very high switching speed t(s■ Fully characterized at 125 °C ducApplications ro■ Electronic transformer for halogen lamps P■ Electronic ballast for fluorescent lighting te■ Switch mode power supplies. soleDescription ObThe BUL810 is manufactured using high voltage -multiepitaxial mesa technology for cost-effective )high performance. It uses a hollow emitter t(sstructure to enhance switching speeds. cThe BUL series is designed for use in lighting duapplications and low cost switch-mode power Obsolete Prosupplies. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1.
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