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BUL804 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description

lete ucThe device is manufactured using high voltage dMulti-Epitaxial Planar technology for high so roswitching speeds and medium voltage capability.

b PIt uses a Cellular Emitter structure with planar - O teedge termination to enhance switching speeds ) lewhile maintaining the wide RBSOA.

Features

  • NPN Transistor.
  • High voltage capability.
  • Low spread of dynamic parameters ).
  • Minimum lot-to-lot spread for reliable operation t(s.
  • Very high switching speed uc.
  • In compliance with the 2002/93/EC European dDirective Pro t(s).

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Full PDF Text Transcription

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BUL804 High voltage fast-switching NPN Power Transistor General features ■ NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters )■ Minimum lot-to-lot spread for reliable operation t(s■ Very high switching speed uc■ In compliance with the 2002/93/EC European dDirective Pro t(s)Description lete ucThe device is manufactured using high voltage dMulti-Epitaxial Planar technology for high so roswitching speeds and medium voltage capability. b PIt uses a Cellular Emitter structure with planar - O teedge termination to enhance switching speeds ) lewhile maintaining the wide RBSOA. t(s oThe device is designed for use as PFC in high c bsfrequency ballast half Bridge voltage fed topology.
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