Datasheet4U Logo Datasheet4U.com

BUL1101E - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Datasheet Summary

Description

The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

📥 Download Datasheet

Datasheet preview – BUL1101E

Datasheet Details

Part number BUL1101E
Manufacturer STMicroelectronics
File Size 233.22 KB
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Datasheet download datasheet BUL1101E Datasheet
Additional preview pages of the BUL1101E datasheet.

📁 Similar Datasheet

  • BUL1102E - NPN Transistor (INCHANGE)
  • BUL118D - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUL118D - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)
  • BUL1203E - NPN Transistor (INCHANGE)
  • BUL123S - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • BUL128 - NPN Transistor (INCHANGE)
  • BUL128D - HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR (TGS)
  • BUL128D - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUL128DB - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUL128DR7 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
Other Datasheets by STMicroelectronics
  • BUL1102E - High voltage fast-switching NPN power transistor
  • BUL116D - MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • BUL118 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • BUL1203 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • BUL1203E - High voltage fast-switching NPN power transistor
  • BUL128 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • BUL128D-B - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • BUL128FP - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
® BUL1101E HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s LARGE RBSOA PRELIMINARY DATA APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Published: |