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BUL805 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds.

Features

  • NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive TO-220 1 2 3.

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Full PDF Text Transcription

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BUL805 High voltage fast-switching NPN Power Transistor Preliminary Data General features ■ ■ ■ ■ ■ ■ NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive TO-220 1 2 3 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology.
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