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80N240K6 - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology.

Features

  • Order code VDS RDS(on) max. ID STD80N240K6 800 V 220 mΩ 16 A.
  • Worldwide best RDS(on) x area.
  • Worldwide best FOM (figure of merit).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Datasheet preview – 80N240K6

Datasheet Details

Part number 80N240K6
Manufacturer STMicroelectronics
File Size 534.53 KB
Description N-channel Power MOSFET
Datasheet download datasheet 80N240K6 Datasheet
Additional preview pages of the 80N240K6 datasheet.

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Full PDF Text Transcription

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STD80N240K6 Datasheet N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max. ID STD80N240K6 800 V 220 mΩ 16 A • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications AM01476v1_tab • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
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