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80N03P - N-Channel 30V MOSFET

Features

  • Trench Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2011/65/EU.

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Datasheet preview – 80N03P

Datasheet Details

Part number 80N03P
Manufacturer VBsemi
File Size 245.48 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet 80N03P Datasheet
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Full PDF Text Transcription

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80N03P-VB 80N03P-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-220AB 30 0.003 0.004 120 Single D FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.
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