80N03 - MOSFET

Description

The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

It can be used in a wide Vanety of applications .

Features

VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stabilty and unifomity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability TO-252-2L top view.

📥 Download Datasheet

80N03 MOSFET by GFD - Datasheet Preview — Datasheet preview – 80N03

Datasheet Details

Part number	80N03
Manufacturer	GFD
File Size	2.17 MB
Description	MOSFET
Datasheet	80N03 Datasheet
Additional preview pages of the 80N03 datasheet.

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Full PDF Text Transcription

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GOFORD DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 80N03 VDS RDS(ON) ID 30V -- 80A GENERAL FEATURES � VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 80N03 TO-252-2L OGFD HTTP://www.gofordsemi.

Published: Mar 12, 2019 |