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80N055 - NP80N055

Description

These products are N-channel MOS Field Effect www.DataSheet4UT.rcaonmsistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A).
  • Low Ciss : Ciss = 2900 pF TYP.
  • Built-in gate protection diode.

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Datasheet preview – 80N055

Datasheet Details

Part number 80N055
Manufacturer NEC
File Size 110.69 KB
Description NP80N055
Datasheet download datasheet 80N055 Datasheet
Additional preview pages of the 80N055 datasheet.

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    Full PDF Text Transcription

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    DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect www.DataSheet4UT.rcaonmsistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2900 pF TYP.
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