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STP9NK65ZFP - N-CHANNEL Power MOSFET

Download the STP9NK65ZFP datasheet PDF. This datasheet also covers the STP9NK65Z variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.

Features

  • Order codes STP9NK65Z STP9NK65ZFP VDSS 650 V 650 V RDS(on) max. < 1.2 Ω < 1.2 Ω ID 6.4 A 6.4 A Pw 125 W 30 W.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP9NK65Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP9NK65Z N-CHANNEL Power MOSFET
STP9NK60Z N-CHANNEL Power MOSFET
STP9NK60ZD N-CHANNEL Power MOSFET
STP9NK60ZFD N-CHANNEL Power MOSFET
STP9NK60ZFDFP N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP9NK65Z STP9NK65ZFP N-channel 650 V, 1 Ω, 6.4 A, TO-220, TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Order codes STP9NK65Z STP9NK65ZFP VDSS 650 V 650 V RDS(on) max. < 1.2 Ω < 1.2 Ω ID 6.4 A 6.4 A Pw 125 W 30 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities Applications ■ Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
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