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STP9NK65Z - N-CHANNEL Power MOSFET

Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.

Features

  • Order codes STP9NK65Z STP9NK65ZFP VDSS 650 V 650 V RDS(on) max. < 1.2 Ω < 1.2 Ω ID 6.4 A 6.4 A Pw 125 W 30 W.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP9NK65Z STP9NK65ZFP N-channel 650 V, 1 Ω, 6.4 A, TO-220, TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Order codes STP9NK65Z STP9NK65ZFP VDSS 650 V 650 V RDS(on) max. < 1.2 Ω < 1.2 Ω ID 6.4 A 6.4 A Pw 125 W 30 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities Applications ■ Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
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