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STN851 - LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description

The device is manufactured in Planar Technology with "Base Island" layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Features

  • Very low collector to emitter saturation voltage.
  • High current gain characteristic.
  • Fast-switching speed.

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Full PDF Text Transcription

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STN851 Low voltage fast-switching NPN power transistor Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed Applications ■ Emergency lighting ■ Voltage regulators ■ Relay drivers ■ High efficiency low voltage switching applications Description The device is manufactured in Planar Technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STN851 N851 March 2009 Package SOT-223 Rev 7 Packaging Tape and reel 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 2.
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