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STB80NE06-10
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE ST B80NE06-10
s s s s
V DSS 60 V
R DS(on) <0.01 Ω
ID 80 A
s
TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
D2PAK DESCRIPTION TO-263 This Power MOSFET is the latest development of (suffix ”T4”) SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a INTERNAL SCHEMATIC DIAGRAM remarkable manufacturing reproducibility. DataSheet4U.
STB80NE06-10 Datasheet
