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STB80N20M5 - Power MOSFET

Datasheet Summary

Description

The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Features

  • Type STB80N20M5 STP80N20M5.
  • VDSS @ TJmax 200 V RDS(on) max < 0.023 Ω ID 61 A 61 A 3 1 1 2 3 Amongst the best RDS(on).
  • area High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested D2PAK TO-220.

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www.DataSheet4U.com STB80N20M5 STP80N20M5 N-channel 200 V, 0.019 Ω, 61 A, TO-220, D2PAK MDmesh™ V Power MOSFET Features Type STB80N20M5 STP80N20M5 ■ ■ ■ ■ ■ VDSS @ TJmax 200 V RDS(on) max < 0.023 Ω ID 61 A 61 A 3 1 1 2 3 Amongst the best RDS(on) * area High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested D2PAK TO-220 Application Switching applications Figure 1. Internal schematic diagram Description The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
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