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STB80NF03L-04T-1 STB80NF03L-04T
N-CHANNEL 30 V - 0.0035Ω - 80A D²PAK/I²PAK STripFET™II MOSFET
Table 1: General Features
TYPE STB80NF03L-04T STB80NF03L-04T-1
s s s
Figure 1: Package
RDS(on) < 0.004 Ω < 0.004 Ω ID (1) 80 A 80 A
VDSS 30 V 30 V
TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED
3 1
3 12
DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB80NF03L-04T Datasheet
