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STB80NE03L-06 STB80NE03L-06-1
N-CHANNEL 30V - 0.005Ω - 80A D2PAK / I2PAK STripFET™ POWER MOSFET
TYPE STB80NE03L-06 STB80NE03L-06-1
s s s s
VDSS 30 V 30 V
RDS(on) < 0.006 Ω < 0.006 Ω
ID 80 A 80 A
TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 100°C 100% AVALANCHE TESTED
3 1
3 12
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D2PAK
I2PAK
INTERNAL SCHEMATIC DIAGRAM
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