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STB185N55 - N-CHANNEL Power MOSFET

Description

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility.

Features

  • Type STB185N55 STP185N55 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) 3 1 2 1. Value limited by wire bonding.
  • 3 1 Ultra low on-resistance 100% avalanche tested TO-220 D2PAK.

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Full PDF Text Transcription

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www.DataSheet4U.com STB185N55 STP185N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh™ low voltage Power MOSFET TARGET SPECIFICATION General features Type STB185N55 STP185N55 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) 3 1 2 1. Value limited by wire bonding ■ ■ 3 1 Ultra low on-resistance 100% avalanche tested TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
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