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STB180N55F3 - N-CHANNEL MOSFET

Description

so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility.

Features

  • Type VDSS RDS(on) ID Pw STB180N55F3 55V ) STP180N55F3 55V 3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc.
  • Ultra low on-resistance d.
  • 100% avalanche tested Pro.

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Full PDF Text Transcription

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STB180N55F3 STP180N55F3 N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET™ Power MOSFET Features Type VDSS RDS(on) ID Pw STB180N55F3 55V ) STP180N55F3 55V 3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc ■ Ultra low on-resistance d ■ 100% avalanche tested Pro Description lete This n-channel enhancement mode Power MOSFET is the latest refinement of so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility. The resulting transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche characteristics and c low gate charge.
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