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STB180N55 - N-CHANNEL Power MOSFET

Description

This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility.

Features

  • Type STB180N55 STP180N55.
  • VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A (Note 1) 120A (Note 1) 3 1 1 2 3 ULTRA LOW ON-.

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Full PDF Text Transcription

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www.DataSheet4U.com STB180N55 STP180N55 N-CHANNEL 55V - 2.9mΩ - 120A - D²PAK - TO-220 MDmesh™ Low Voltage Power MOSFET TARGET SPECIFICATION General features Type STB180N55 STP180N55 ■ ■ VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A (Note 1) 120A (Note 1) 3 1 1 2 3 ULTRA LOW ON-RESISTANCE 100% AVALANCHE TESTED D²PAK TO-220 Description This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
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