Datasheet4U Logo Datasheet4U.com

STB18NF25 - N-Channel MOSFET

Description

STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Features

  • Order code STB18NF25 VDS 250 V RDS(on) max. 165 mΩ ID 17 A.
  • AEC-Q101 qualified.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB18NF30 N-CHANNEL POWER MOSFET STMicroelectronics
STB18N55M5 N-Channel MOSFET INCHANGE
STB18N55M5 N-channel Power MOSFET STMicroelectronics
STB18N60DM2 N-channel Power MOSFET STMicroelectronics
STB18N60M2 N-CHANNEL POWER MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STB18N20 N-CHANNEL Power MOSFET
STB18NM60N Power MOSFET
STB180N55 N-CHANNEL Power MOSFET
STB185N55 N-CHANNEL Power MOSFET
STB100NF03L-03 N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
STB18NF25 Datasheet Automotive-grade N-channel 250 V, 140 mΩ typ., 17 A STripFET II Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code STB18NF25 VDS 250 V RDS(on) max. 165 mΩ ID 17 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications G(1) Description S(3) This Power MOSFET has been developed using STMicroelectronics' unique AM01475v1_noZen STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Published: |