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QS8K2
30V Nch +Nch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 54mΩ ±3.5A 1.5W
lFeatures
1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm) Basic ordering unit (pcs)
8 3000
Taping code
TR
Marking
K02
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage
VDSS
30 V
ID ±3.