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QS8M11 - Power MOSFET

Description

The UTC QS8M11 uses UTC’s advanced technology to provide the customers with low voltage drive, etc.

The UTC QS8M11 is suitable for switching.

Features

  • N-Channel: 30V, 3.5A RDS(ON) < 50mΩ @ VGS =10V RDS(ON) < 65mΩ @ VGS= 4.5V RDS(ON) < 70mΩ @ VGS= 4.0V.
  • P-Channel: -30V, -3.0A RDS(ON) < 75mΩ @ VGS= -10V RDS(ON) < 115mΩ @ VGS= -4.5V RDS(ON) < 125mΩ @ VGS= -4.0V.
  • Low voltage drive (4V drive).
  • Low on-resistance.
  • SYMBOL (7)(8) D1 (5)(6) D2 SOP-8 (2) (4) G1 G2 S1 N-Channel (1) S2 P-Channel (3).

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Datasheet preview – QS8M11

Datasheet Details

Part number QS8M11
Manufacturer Unisonic Technologies
File Size 208.69 KB
Description Power MOSFET
Datasheet download datasheet QS8M11 Datasheet
Additional preview pages of the QS8M11 datasheet.

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    Full PDF Text Transcription

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    UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET „ DESCRIPTION The UTC QS8M11 uses UTC’s advanced technology to provide the customers with low voltage drive, etc. The UTC QS8M11 is suitable for switching. „ FEATURES * N-Channel: 30V, 3.5A RDS(ON) < 50mΩ @ VGS =10V RDS(ON) < 65mΩ @ VGS= 4.5V RDS(ON) < 70mΩ @ VGS= 4.0V * P-Channel: -30V, -3.0A RDS(ON) < 75mΩ @ VGS= -10V RDS(ON) < 115mΩ @ VGS= -4.5V RDS(ON) < 125mΩ @ VGS= -4.
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