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QS8J11 - Middle Power MOSFET

Features

  • 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plating ; RoHS compliant lOutline TSMT8 　 　 　　　　　　 lInner circuit 　　 Datasheet 　　　　　　 　 　 　 　　　　　　 lPackaging specifications Packing Embossed Tape l.

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Datasheet Details

Part number QS8J11
Manufacturer ROHM
File Size 1.21 MB
Description Middle Power MOSFET
Datasheet download datasheet QS8J11 Datasheet
Additional preview pages of the QS8J11 datasheet.

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Full PDF Text Transcription

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NotNeRewcDoemsimgennsded for QS8J11 　　-12V Pch +Pch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -12V 43mΩ ±3.5A 1.5W lFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plating ; RoHS compliant lOutline TSMT8 　 　 　　　　　　 lInner circuit 　　 Datasheet 　　　　　　 　 　 　 　　　　　　 lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR Marking J11 lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage VDSS ID ID,pulse*1 VGSS -12 ±3.
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