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QS8K2FRA
30V Nch+Nch Small Signal MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 54mΩ ±3.5A 1.5W
lFeatures
1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS compliant 5) AEC-Q101 Qualified
lOutline
TSMT8
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Reel size (mm) Type Tape width (mm)
Quantity (pcs) Taping code Marking
Embossed Tape 180 8 3000 TR K02
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current Pulsed drain current
ID ±3.5 A IDP*1 ±12 A
Gate - Source voltage
VGSS
±12 V
Power dissipation (total)
PD*2 1.5 W
PD*3 1.