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TP65H480G4JSGB - 650V SuperGaN GaN FET

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Renesas

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TP65H480G4JSGB 650V SuperGaN GaN FET by Renesas - Datasheet Preview — Datasheet preview – TP65H480G4JSGB

Datasheet Details

Part number	TP65H480G4JSGB
Manufacturer	Renesas
File Size	897.46 KB
Description	650V SuperGaN GaN FET
Datasheet	TP65H480G4JSGB Datasheet
Additional preview pages of the TP65H480G4JSGB datasheet.

Product details

Description

The TP65H480G4JSGB 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced system size and weight.
Overall lower syste.

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Published: Jan 30, 2025 |