TP65H030G4PWS
Description
The TP65H030G4PWS 650V, 30mΩ Gallium Nitride (Ga N) FET is a normally-off device using Renesas’ Gen IV plus platform. It bines a state-of-the-art high voltage Ga N HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability.
The Gen IV plus Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Benefits
- Superior normally off architecture with D-mode Ga N HEMT
- patible with standard silicon drivers
- Enhanced noise immunity with a 4V threshold voltage with no negative gate drive required
- Enables high-efficiency, high power density, and reliable power conversion
- Facilitates cost-effective Ga N adoption reducing system size, weight, and costs
Product/Schematic Diagrams
Features
- Ultra-fast switching Gen IV plus Ga N
- JEDEC-qualified Ga N...
