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TP65H070G4LSGB - 650V SuperGaN GaN FET

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Renesas

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TP65H070G4LSGB 650V SuperGaN GaN FET by Renesas - Datasheet Preview — Datasheet preview – TP65H070G4LSGB

Datasheet Details

Part number	TP65H070G4LSGB
Manufacturer	Renesas
File Size	835.33 KB
Description	650V SuperGaN GaN FET
Datasheet	TP65H070G4LSGB Datasheet
Additional preview pages of the TP65H070G4LSGB datasheet.

Product details

Description

The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. offering superior reliability and performance. R

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced system size and weight.
Overall lower syste.

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Published: Jan 30, 2025 |