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RJQ6022DPM - N-Channel IGBT

Description

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Features

  • High speed switching.
  • Low on-state voltage.
  • Built in fast recovery diode in one package R07DS0651EJ0100 Rev.1.00 Jan 23, 2012 Outline PRSS0005ZB-A) (Package name: TO-3PFM) IGBT1 Diode1 1 1. Gate (1) 2. Collector (1) 3. Emitter (1), Collector (2) 4. Emitter (2) 5. Gate (2) 2 IGBT2 Diode2 5 12 34 3 5 4 www. DataSheet. co. kr Absolute Maximum Ratings IGBT1, IGBT2 Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25.

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Full PDF Text Transcription

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Preliminary Datasheet RJQ6022DPM 600V - 10A - IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Built in fast recovery diode in one package R07DS0651EJ0100 Rev.1.00 Jan 23, 2012 Outline PRSS0005ZB-A) (Package name: TO-3PFM) IGBT1 Diode1 1 1. Gate (1) 2. Collector (1) 3. Emitter (1), Collector (2) 4. Emitter (2) 5. Gate (2) 2 IGBT2 Diode2 5 12 34 3 5 4 www.DataSheet.co.kr Absolute Maximum Ratings IGBT1, IGBT2 Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.
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