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RJQ6008BDPM - 600V Power Switching IGBT

Features

  • Built in fast recovery diode in one package.
  • Low collector to emitter saturation voltage VCE(sat) =1.8 V typ. (at IC = 20 A, VGE = 15V, Tc = 25 C).
  • Quality grade: Standard.
  • High speed switching.

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Full PDF Text Transcription

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RJQ6008BDPM 600V - 6A - IGBT Power Switching Datasheet R07DS1489EJ0200 Rev.2.00 Nov.19.2020 Features  Built in fast recovery diode in one package  Low collector to emitter saturation voltage VCE(sat) =1.8 V typ. (at IC = 20 A, VGE = 15V, Tc = 25 C)  Quality grade: Standard  High speed switching  Applications: PFC Key Performance Type RJQ6008BDPM VCES 600 V IC 20 A VCE(sat), TC=25C 1.8 V IF 20 A Tj 150 C Outline RENESAS Package code: PRSS0005ZB-A (Package name: TO-3PFM-5) 2 12345 1,3 1. Anode, Collector 2. Cathode 5 3. Anode, Collector 4. Emitter 5.
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