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RJQ6008DPM - IGBT/Diode

Features

  • Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology.
  • High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline.

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Full PDF Text Transcription

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RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline RENESAS Package code: PRSS0005ZB-A (Package name: TO-3PFM-5) 2 Diode IGBT 3 12345 5 4 1. NC 2. Cathode 3. Anode, Collector 4. Emitter 5.
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