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RJQ6020DPM - N-Channel MOS FET

Description

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Features

  • High speed switching.
  • Low on-state voltage.
  • Built in fast recovery diode in one package R07DS0649EJ0100 Rev.1.00 Jan 23, 2012 Outline.

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Full PDF Text Transcription

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Preliminary Datasheet RJQ6020DPM 600V - 20A - MOS FET High Speed Power Switching Features • High speed switching • Low on-state voltage • Built in fast recovery diode in one package R07DS0649EJ0100 Rev.1.00 Jan 23, 2012 Outline RENESAS Package code: PRSS0005ZB-A) (Package name: TO-3PFM) 2 1, 3 1. Anode 2. Cathode 3. Anode, Drain 4. Source 5. Gate 5 12 34 5 4 www.DataSheet.co.kr Absolute Maximum Ratings MOS FET Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Limited by maximum safe operating area.
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