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RJP60D0DPK - Silicon N-Channel IGBT

Description

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Features

  • Short circuit withstand time (5 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C).
  • Gate to emitter voltage rating 30 V.
  • Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Outline.

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Full PDF Text Transcription

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Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.
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