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RJP60D0DPE - N-Channel IGBT

Description

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Features

  • Short circuit withstand time (5 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C).
  • Gate to emitter voltage rating 30 V.
  • Pb-free lead plating and chip bonding R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Outline.

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Full PDF Text Transcription

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Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1. Gate 2. Collector 3. Emitter 4. Collecotor www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
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