Datasheet4U Logo Datasheet4U.com

RJP60F0DPE - N-Channel IGBT

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C).
  • Trench gate and thin wafer technology.
  • High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJP6085DPK Silicon N-Channel IGBT Renesas Technology
RJP6085DPN Silicon N-Channel IGBT Renesas Technology
RJP60D0DPP-M0 Silicon N-Channel IGBT Renesas Technology
RJP020N06 Drive Nch MOS FET Rohm
RJP020N06FRA Power MOSFET ROHM

Other Datasheets by Renesas

Part Number Description
RJP60F0DPM N-Channel IGBT
RJP60F4DPM N-Channel IGBT
RJP60F5DPM N-Channel IGBT
RJP60F7DPK IGBT
RJP6065DPM N-Channel IGBT

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1. Gate 2. Collector 3. Emitter 4. Collector www.DataSheet.co.
Published: |