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RJP60F0DPM - N-Channel IGBT

Description

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Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C).
  • Trench gate and thin wafer technology.
  • High speed switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Outline.

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Full PDF Text Transcription

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Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1. Gate 2. Collector 3. Emitter E 1 2 3 www.DataSheet.co.kr Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2.
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