Datasheet4U Logo Datasheet4U.com

RJK0654DPB - N-Channel Power MOSFET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • High speed switching.
  • Low drive current.
  • Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • High density mounting Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJK0651DPB Silicon N Channel Power MOS FET Renesas Technology
RJK0652DPB Silicon N Channel Power MOS FET Renesas Technology
RJK0655DPB Silicon N Channel Power MOS FET Renesas Technology
RJK0656DPB Silicon N Channel Power MOS FET Renesas Technology
RJK0657DPA N Channel Power MOS FET Renesas Technology

Other Datasheets by Renesas

Part Number Description
RJK0628JPE N-Channel Power MOS FET
RJK0629DPE N-Channel Power MOS FET
RJK0629DPK N-Channel Power MOS FET
RJK0629DPN N-Channel Power MOS FET
RJK0630JPE Silicon N-Channel MOS FET

Full PDF Text Transcription

Click to expand full text
RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1052EJ0200 (Previous: REJ03G1880-0100) Rev.2.
Published: |