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RJK0629DPK - N-Channel Power MOS FET

Description

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Features

  • VDSS: 60 V.
  • RDS(on): 4.5 m (Max).
  • ID: 100 A Outline.

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Datasheet Details

Part number RJK0629DPK
Manufacturer Renesas
File Size 101.35 KB
Description N-Channel Power MOS FET
Datasheet download datasheet RJK0629DPK Datasheet

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Full PDF Text Transcription

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RJK0629DPK 60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use Features  VDSS: 60 V  RDS(on): 4.5 m (Max)  ID: 100 A Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1G 1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 I Note2 AP Pch Note3 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. Tch  150C 2. STch = 25C, Tch  150C, L = 100 H 3. Value at Tc = 25C Preliminary Datasheet R07DS1061EJ0200 (Previous: REJ03G1875-0100) Rev.2.
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