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RJK0630JPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 6.2 mΩ typ. • Capable of 4.5 V gate drive • Low input capacitance : Ciss = 2100 pF typ.
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4
123
1G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4.
RJK0630JPE Datasheet
