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RJK0631JPE
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 12 mΩ typ. • Capable of 4.5 V gate drive • Low input capacitance: Ciss = 1350 pF typ
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4
123
1G
Preliminary Datasheet
R07DS0341EJ0300 Rev.3.00
Jul 24, 2013
2, 4 D
1. Gate 2. Drain 3. Source 4. Drain
S 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10μs duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω 3.
RJK0631JPE Datasheet
