Click to expand full text
RJK0636JPD
60 V - 25 A - N Channel Power MOS FET High Speed Power Switching
Preliminary Datasheet
R07DS0365EJ0200 Rev.2.00
Aug 29, 2012
Features
For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 18 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 750 pF typ
Outline
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S))
4
2, 4 D
123
1G
1. Gate 2. Drain 3. Source 4. Drain
S 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Tch = 25C, Rg 50 3. Tc = 25C 4.
RJK0636JPD Datasheet
