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RJK0628JPE - N-Channel Power MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • For Automotive.

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Full PDF Text Transcription

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RJK0628JPE 60 V - 160 A - N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 2.6 m typ.  Capable of 4.5 V gate drive  Low input capacitance : Ciss = 5400 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tch = 25C, Rg  50  3. Tc = 25C 4.
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