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RJK0452DPB - Silicon N Channel Power MOS FET

Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free Outline.

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Datasheet Details

Part number RJK0452DPB
Manufacturer Renesas
File Size 100.28 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0452DPB Datasheet

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Full PDF Text Transcription

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RJK0452DPB 40V, 45A, 3.5m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0074EJ0200 Rev.2.00 Apr 09, 2013 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Application  Switching Mode Power Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
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