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RJK0406JPE - Silicon N-Channel MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • For Automotive.

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Datasheet Details

Part number RJK0406JPE
Manufacturer Renesas
File Size 80.85 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet RJK0406JPE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 1.65 m typ.  High current devices : ID = 160 A  Low input capacitance : Ciss = 6300 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tch = 25C, Rg  50  3. Tc = 25C 4.
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