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RBN40N65T1UFWA
650V - 40A - IGBT
Features
Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C) High speed switching Applications: UPS, Welding, photovoltaic inverters, Power converter system Unsawn wafer Wafer size: 200 mm Quality grade: Standard
Datasheet
R07DS1496EJ0120 Rev.1.20
Oct.18th.2024
Key performance
Product name RBN40N65T1UFWA
VCES 650 V
IC 40 A
Die size 13.69 mm2 (3.70 mm x 3.70 mm)
Package Unsawn wafer
Outline
2 C
G 1
E 3 1. Gate 2. Collector (The back) 3. Emitter
Die
2
1
3
Wafer
Mechanical parameter
Chip size Area total Thickness Wafer size Passivation frontside Pad metal Backside metal
3.70 x 3.70 13.69
0.075 typ. 193.9
Polyimide AlSi 5.
RBN40N65T1UFWA Datasheet
