Click to expand full text
RBN200N180S2HFWA
1800V - 400A/200A - IGBT
Features
Renesas generation 8th Trench IGBT Short circuit withstands time (10 s min.) Optimized for high power application Unsawn wafer Wafer size = 200 mm Quality grade: Standard
Outline
Datasheet
R07DS1453EJ0110 Rev.1.10
Apr 11th, 2023
wafer
1.Gate 2.Collector(The back) 3.Emitter
Absolute Maximum Ratings
(Tj = 25°C unless otherwise noted)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
1800
V
Gate to emitter voltage
VGES
±30
V
Collector current
Tc = 25°C
IC
400 Notes1
A
Tc = 100°C
IC
200 Notes1
A
Junction temperature
Tj
175 Notes2
C
Notes: 1. Depends on thermal properties of assembly.
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175C.
3.
RBN200N180S2HFWA Datasheet
