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RBN40H125S1FPQ-A0
1250V - 40A - IGBT Power Switching
Datasheet
R07DS1380EJ0141 Rev.1.41
Oct.14.2021
Features
• Trench gate and thin wafer technology (G8H series) • High speed switching
• Built in fast recovery diode in one package
• Short circuit withstands time (10 µs min.)
• Low collector to emitter saturation voltage
• Applications: UPS, Welding, photovoltaic
VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system
• Quality grade: Standard
Key Performance
Type RBN40H125S1FPQ-A0
VCES 1250 V
IC 40 A
VCE(sat), TC=25°C 1.8 V
IF 25 A
tSC 10µs
Tj 175 °C
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
C
4 123
1. Gate
G
2. Collector 3. Emitter
4. Collector
E
R07DS1380EJ0141 Rev.1.41 Oct.14.
RBN40H125S1FPQ-A0 Datasheet
