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RBN40N125S1UFWA
1250V - 40A - IGBT
Features
Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C) High speed switching Short circuit withstands time (10 s min.) Applications: UPS, Welding, photovoltaic inverters, Power converter system Unsawn wafer Wafer size = 200 mm Quality grade: Standard
Datasheet
R07DS1500EJ0120 Rev.1.20
Oct.18th.2024
Key performance
Product name RBN40N125S1UFWA
VCES 1250 V
IC 40 A
Die size 33.28 mm2 (5.20 mm x 6.40 mm)
Package Unsawn wafer
Outline
2 C
G 1
E 3 1. Gate 2. Collector (The back) 3. Emitter
Die
2 3 1 3
Wafer
Mechanical parameter
Chip size Area total Thickness Wafer size Passivation frontside Pad metal Backside metal
5.20 x 6.40 33.28
0.142 typ.
RBN40N125S1UFWA Datasheet
