HS54095 - Silicon N Channel MOS FET

Features

Low on-resistance RDS(on) = 13.5 Ω typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25°C).
Low drive current.
High density mounting Outline.

Renesas

Datasheet Details

Part number	HS54095
Manufacturer	Renesas
File Size	63.49 KB
Description	Silicon N Channel MOS FET
Datasheet	HS54095 Datasheet
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HS54095 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 13.5 Ω typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) G 321 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch θch-a Tch Tstg REJ03G1668-0200 Rev.2.00 Dec 10, 2009 D 1. Gate 2. Drain 3. Source S Ratings 600 ±30 0.2 0.8 0.2 0.8 0.

Published: Jul 30, 2015 |