HS50N06DA
Description
The HS50N06DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, puter power management and DC to DC converter circuits which need low in-line power loss.
2. Feature
- RDS(ON)≦22mΩ@VGS=10V
- Super high density cell design for extremely low
RDS(on)
22 mΩ
RDS(ON)
- Exceptional on-resistance and maximum DC
A current capability
3. Pin configuration
Order Number HS50N06DA
Package TO-252
TO-252
Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved. Oct,2012-Ver1.0
.homsemi.
1/5
N channel 60V MOSFET
4. Absolute maximum ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
Gate-Source Voltage
VDSS
±20
Continuous...
