HS50N06
Description
The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching
2. Features
- RDS(ON)=19mΩ(typical)
- Ultra low gate charge (typical 30n C)
- Low reverse transfer capacitance
- Fast switching capability
- 100％ avalanche energy specified
- Improved dv/dt capability
3. Pin configuration
Coperight@ Guangz hou Chengq i Semiconductor Co.,LTD.All rights reserved. .homsemi. 1/5
N channel MOSFET
4. Absolute maximum ratings
Parameter
Symbol
Value
Unit
Drain to source voltage
Gate to source voltage
Continuous drain current Drain current pulsed (note1)
TJ=25 ºC TJ=100 ºC
Single pulsed avalanche energy (note2)
Repetitive avalanche energy (note1)
Peak diode recovery dv/dt (note3)
VDSS VGSS
ID ID IDM EAS EAR...
