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HIP2060 - Half Bridge Power MOSFET

Description

The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors.

The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.

Features

  • Two 10A Power MOS N-Channel Transistors.
  • Output Voltage to 60V.
  • rDS(ON).
  • 0.135 Max Per Transistor at VGS = 15V.
  • rDS(ON).
  • . 0.15 Max Per Transistor at VGS = 10V.
  • Pulsed Current.
  • 25A Each Transistor.
  • Avalanche Energy.
  • . 100mJ Each Transistor.
  • Grounded Tab Eliminates Heat Sink Isolation Ordering Information TEMP. PART NUMBER RANGE (oC).

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Datasheet Details

Part number HIP2060
Manufacturer Renesas
File Size 454.67 KB
Description Half Bridge Power MOSFET
Datasheet download datasheet HIP2060 Datasheet

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Full PDF Text Transcription

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DATASHEET HIP2060 60V, 10A Half Bridge Power MOSFET Array Features • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON) . . . . . 0.135 Max Per Transistor at VGS = 15V • rDS(ON) . . . . . . 0.15 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 25A Each Transistor • Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor • Grounded Tab Eliminates Heat Sink Isolation Ordering Information TEMP. PART NUMBER RANGE (oC) PACKAGE PKG. NO. HIP2060AS1 -40 to 125 5 Ld SIP Z5.067C HIP2060AS2 -40 to 125 5 Ld Gullwing SIP Z5.067A HIP2060AS3 -40 to 125 5 Ld SIP Z5.067B NOTE: When ordering use the entire part number. FN3983 Rev 5.
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